Dr. Liu ZhuangJian

Bio

Dr. Liu, ZhuangJian is Senior Scientist at the Engineering Mechanics Department of the Institute of High Performance Computing, A*Star.  He received Ph.D and MEng from National University of Singapore, MEng from Tongji University and BSci from Tianjin University.  His research areas are computational solid mechanics.  He has been involved in Industrial collaborations, being the PI for numerous industrial projects with government agency and multi-national companies, such as whole ship shock analysis; underwater shock analysis from DSTA and DSO, the coupled thermal-electrical analysis from Molex and stress-strain analysis from HP and Phillips.  Current research work focuses on computational nanoelectronics and nanomechanics, including instability and buckling analysis of stretchable electronic systems and thermal analysis for multifunctional electrophysiological balloon catheters.  His research work has had significant impact in the area of stretchable silicon systems, where he has published numerous papers as co-author in top journals such as Science and Nature Materials, including the cover article of the prestigious PNAS journal.

Presentation Abstract

Electronic systems with elastic mechanical responses to high strain deformations are of growing interest, due to their ability to enable new electrical, optical and biomedical devices, and other applications whose requirements large stretchable capability, such as eyelike digital cameras, conformable skin sensors, intelligent surgical gloves, and structural health monitoring devices.  The designs of these systems can range from simple layouts consisting of uniform films on flat substrates to complex lithographically patterned films on substrates with structures of relief embossed on their surfaces.  The process for fabricating stretchable silicon circuits is reported recently.

High performance computational simulation are used in materials and mechanical design strategies for classes of electronic circuits that offer extremely high flexibility and stretchability over large area, enabling them to accommodate even demanding deformation modes, such as twisting and linear stretching to ‘rubber-band’ levels of strain over 100%. The use of printed single crystalline silicon nanomaterials for the semiconductor provides performance in flexible and stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive computational studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators and differential amplifiers, suggest a valuable route to high performance stretchable electronics that can be integrated with nearly arbitrary substrates.